advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v esd improved capability r ds(on) 7 simple drive requirement i d 1.6a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 4.5 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change without notice 201301041 halogen-free product 1.6 + 20 13 1.6 1 AP02N70EI-HF parameter rating 700 storage temperature range -55 to 150 6.4 27.8 1 -55 to 150 parameter a p02n70 from apec provide the designer with the best combination of fast switching , low on-resistance and cost- effectiveness . the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. s g d g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 700 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 10 ua q g total gate charge i d =0.8a - 17 30 nc q gs gate-source charge v ds =560v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 11 - nc t d(on) turn-on delay time v dd =350v - 10 - ns t r rise time i d =0.8a - 8 - ns t d(off) turn-off delay time r g =4.7 -21- ns t f fall time v gs =10v - 15 - ns c iss input capacitance v gs =0v - 170 300 pf c oss output capacitance v ds =25v - 30 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =1.6a, v gs =0v - - 1.5 v t rr reverse recovery time i s =1.6a, v gs =0v, - 340 - ns q rr reverse recovery charge di/dt=100a/s - 2550 - nc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=10mh , r g =25 , i as =1.6a. 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP02N70EI-HF 2
a p02n70ei-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 0 1 1 2 2 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 0 1 1 2 2 2 0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized r ds(on) i d =0.8a v g =10v 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 tj , junction temperature ( ) normalized bv dss (v) 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( ) normalized v gs(th) (v)
AP02N70EI-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =0.8a v ds =560v 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
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